Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications

ABSTRACT

Nanostructured photonic materials and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft Xray wavelengths are described. Such a material may be fabricated with nanoscale features tailored for a selected wavelength range, such as at particular UV, EUV, or soft Xray wavelengths or wavelength ranges. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, masks, photoresists, or other components for use in applications such as lithography, wafer patterning, biomedical applications, or other applications.

RELATED APPLICATION

This application is a non-provisional of U.S. Provisional ApplicationNo. 61/588,601, filed Jan. 19, 2012, titled “Materials, Components, andMethods for Use with Extreme Ultraviolet Radiation in Lithography &Other Applications,” the disclosure of which is hereby incorporated byreference in its entirety.

BACKGROUND

Optical lithography systems are commonly used for fabrication, forexample, devices. The resolving power of such systems is proportional tothe exposure wavelength. Thus, shorter wavelengths can improveresolution in fabrication. Extreme ultraviolet lithography (EUVL) useselectromagnetic radiation at extreme ultraviolet (EUV) wavelengths(approximately 120 nanometers to 0.1 nanometers). Accordingly, photonsat these wavelengths have energies in the range of approximately 10electron volts (eV) to 12.4 keV (corresponding to 124 nm and 0.1 nm,respectively). Extreme ultraviolet wavelengths may be generatedartificially by devices such as plasma and synchrotron light sources.Using EUV wavelengths for lithography has potential advantages ofreducing feature sizes in devices such as semiconductor chips as well asin other applications such as polymer electronics, solar cells, biotech,medical technologies. At EUV wavelengths, the materials used to form thecomponents of the lithography system, for example mirrors, lenses,photoresist, etc. become important. Most materials, however, have a highabsorption rate for radiation at EUV wavelengths. Higher absorption inthese materials at the EUV wavelengths decreases the performance of EUVlithography systems. For example, EUV lithography systems may need ahigher power source to overcome this absorption.

SUMMARY OF THE INVENTION

This disclosure relates generally to materials, devices, apparatus, andmethods for use with ultraviolet (UV), extreme ultraviolet (EUV) andsoft Xray radiation, such as in lithography (EUVL) or otherapplications. More specifically, but not exclusively, the disclosurerelates to materials and components for use in UV, EUV and soft Xrayapplications, as well as methods of fabrication and use of suchmaterials and components in apparatus, devices, and systems using EUVradiation.

In certain embodiments, the disclosure relates to an element that can beused in a light exposure system, wherein the system or subsystemincludes a light source to transmit light having a wavelength. Theelement can include a material having plurality of structural features.The plurality of structural features can improve the reflectivity of theelement to greater than 70% for a selected wavelength.

In another embodiment, the disclosure relates to an element that can beused in a light exposure system. The system or subsystem can include alight source to transmit light having a wavelength. The element caninclude a material having plurality of structural features. Theplurality of structural features can improve the transmission of theelement to greater than 4% for a selected wavelength.

In another embodiment, the disclosure relates to an element that can beused in a light exposure system. The system or subsystem can include alight source to transmit light having a wavelength. The element caninclude a material having plurality of structural features. Theplurality of structural features can control the electromagneticradiation absorption for a selected wavelength.

In some embodiments, the light exposure system can include aphotolithography tool, biotechnology system, scanning or imaging system,astronomical system, material processing system or a printing system.

In one embodiment, the wavelength is less than or equal to 250 nm. Theplurality of structural features can have a first size where the firstsize substantially correlating with the wavelength. In one embodiment,the plurality of structural features have a first size of between 250 nmand 0.01 nm. The plurality of structural features can be one, two, orthree dimensional. the plurality of structural features can have aperiodicity in the material. The periodicity may be in one, two, orthree dimensions. The plurality of structural features can be arrangedin one of the following: semi-periodic, aperiodic, quasi-periodic,graded, partially graded, symmetric, fractal, gyroid, swiss roll,non-planar, segments, repeated unit, forming a pattern, or randomly orsemi random order in the material. The material can include one or moreof the following: metal, dielectric, gas, liquid, compound,semiconductor, polymer, organic material, biological material, monatomicmaterial, air, Carbon, Molybedenum, Beryllium, Lanthanam, Boron Carbide,Silicon, SiO2, TiO2, Ruthenium, Niobium, Rodium, Gold, Silver, Copper,Platinum, Palladium, Germanium, ,DNA, proteins, graphene, graphite,carbon nanotubes, MoS, O2, N2, He, H2, Ar, CO2. The structural featurescan include one or more of the following: metal, dielectric, gas,liquid, compound, semiconductor, polymer, organic material, biologicalmaterial, monatomic material, air, Carbon, Molybedenum, Beryllium,Lanthanam, Boron Carbide, Silicon, SiO2, TiO2, Ruthenium, Niobium,Rodium, Gold, Silver, Copper, Platinum, Palladium, Germanium, DNA,proteins, graphene, graphite, carbon nanotubes, or MoS, O2, N2, He, H2,Ar,CO2, vacuum or voids. The plurality of structural features can haveshapes or dimensions containing layers, films, spheres, blocks,pyramids, rings, porous structures, cylinders, linked shapes, shells,freeform shapes, chiral structures, hemispheres or segments.

In some embodiments, the element can be a substrate, mirror, lens,surface, window, facet, filter, covering element, capping layer,protective layer, barrier layer, thin film, coating, internal surfacearea, collector, droplet generator, interdispersed material, panel,waveguide, cavity, fiber, structural component, reflective element,transmissive element, a detector, a wavelength monitor, bandwidth orpower monitor, sensors, a photomask, photoresist, a cooling mechanism, aheat management mechanism, light source, lamp, laser, optical element,mask aligner, integrator, structural component. optical device,electrical device.

In some embodiments, the material or structural features can be cleanedor post processed by one of the following methods of processing:chemical etching, laser radiation or heating.

In one embodiment, the material or subset of the material or aspect ofthe material can be fabricated by one of the following methods ofprocessing: self-assembly, directed assembly, soft templating,electroforming, electroplating, sacrificial or scaffolding materials,block co-polymers, bottom-up techniques, EUV or XUV lithography, focusedelectron or ion beams, nanoimprinting, atomic force or scanning probemicroscopy, two or more photon lithography, laser irradiation,dealloying, chemical etching, chemical surfactants, surface treatments.

In certain embodiments, the disclosure provides a method of fabricatinga material that can have a reflectivity of more than 70% at awavelength. The method can include the step of polishing a host layer.In some embodiments, the method can further include the step ofassembling a polymeric or scaffolding structure. Moreover, the methodcan include growing a main layer over the scaffolding structure. Themethod can also include polishing the surface of the main layer.Furthermore, the method can include the step of removing the polymericor scaffolding structure so that the reflectivity of the material isgreater than 70% at a wavelength between 0.1 nm and 250 nm. In someembodiments, the method can include the step of smoothing one or morelayers through laser irradiation or chemical etching. The polymeric orscaffolding structure can be one or more block co-polymers. In oneembodiment, the method can further include the step of applying acapping or substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure may be more fully appreciated in connection withthe following detailed description taken in conjunction with theaccompanying drawings, wherein:

FIG. 1 illustrates details of reflectivity characteristics of a Mo/Simultilayer stack at EUV wavelengths compared to a structure of amaterial described herein.

FIG. 2 illustrates an embodiment of a three dimensional structurecontaining structural features and an example reflectance profile from astructure containing voids at EUV wavelengths.

FIG. 3 illustrates an embodiment of a photolithography mask with amaterial described herein.

FIG. 4 shows an embodiment of a photoresist with a material describedherein.

FIG. 5 shows an embodiment of an optical element or surface with amaterial described herein.

FIG. 6 shows an embodiment of a fabrication process to make a materialdescribed herein using a polymeric template.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Lithography using extreme ultraviolet radiation may enable fabricationof devices with smaller feature sizes. However, most materials have ahigh absorption for electromagnetic radiation in the EUV spectrum. Thechoice of natural materials with a low absorption rate in the EUVspectrum is limited. Accordingly, the high absorption of most materialsaffects the performance of EUV lithography (EUVL) systems. For example,high levels of optical power might be required to operate a EUVL system.The system might also require an extensive heat management systembecause of the increased optical power.

This disclosure describes materials that can improve performance of EUVLsystems. The disclosure further describes fabrication of these materialsand using these materials in components, apparatus, and devices of aEUVL system. The materials, methods, and systems described here can alsobe used in systems where the electromagnetic radiation is in theultraviolet and the soft x-ray wavelengths.

The materials can further improve performance in non-lithography systemswhich may use UV, EUV, or soft X-ray wavelengths. For example, lamps andlight sources, biological (e.g. biological assay and array development),botanical systems, imaging and microscopy systems, sensor activation,fluorescence, quantum dots, astronomy systems, material processingsystems and atomic, nuclear and particle emission radiation,acceleration systems, space systems.

As used herein, UV radiation is electromagnetic radiation in thewavelength range of approximately 400 nanometers to 120 nanometers, EUVradiation is electromagnetic radiation in the wavelength range ofapproximately 120 nanometers to 1 nanometers, and soft X-ray radiationis electromagnetic radiation in the wavelength range of approximately 1nanometers to 0.01 nanometers. The selected wavelength range may be partof a two or more photon process which may be equivalent to an excitationin the UV, EUV or X-ray range. Some differences in definition may existin the general literature, but the intended region is approximately thesame. In addition, the intended range intends to encompass radiationdefined as XUV radiation.

This disclosure also describes systems, apparatus, and methods, whichemploy UV, EUV, XUV, soft X-ray radiation for applications inbiomaterial development, printing and patterning, microscopy, materialprocessing, astronomical systems, light exposure, imaging and scanningsystems. More specifically, the applications can include 3D printing,selective biomaterial patterning, biosensor activation, DNA/peptidepatterning, quantum dot activation, fluorescence microscopy, selectivebiomaterial activation.

The disclosure describes materials that can be used in extremeultraviolet wavelength applications. The material may include featuresthat can be used in applications that require operation at one or moreelectromagnetic wavelength range. In one embodiment, the dimension ofstructural features is approximately in the same order as thewavelengths used in extreme ultraviolet applications. For example, thestructural features can have a dimension of approximately 13.5 nm. Insome embodiments, the features may be structural features havingdimensions in the order of 10 to 20 nm. In another embodiment, thematerial can have structural features in the range of 0.001 nm to 10 nm.In yet another embodiment, the material can have structural features inthe range of 10 nm to 250 nm. These features can be referred to asnanoscale features. The nanoscale features may be one dimensional, twodimensional, or three dimensional. The structural features can reducethe bulk electromagnetic absorption of the material. For example, insome applications, the nanoscale features can approximately correlatewith the wavelength of the radiation used in that application. Thematerial may include sub-wavelength features.

The materials can also be designed to reduce absorption in applicationsthat use ultraviolet (UV) wavelength range. For example, the dimensionof the structural features can correlate to the UV wavelengths. In otherembodiments, the dimensions of the structural features can correlate tothe soft X-Ray wavelength range. The selected wavelength range may bepart of a two or more photon (multiphoton) process which replaces theUV, EUV or X-ray range.

The nanoscale features may include, for example, a periodic orsemi-periodic, quasi-periodic or aperiodic structure or a repeating orrepeated element. The periodic structure may be a one, two or threedimensional structure. The structure may be part of a layered structure,or on a substrate. The substrate may be planar or non-planar orfreeform. Examples of a periodic structure include a 2D or 3D array ofnanoparticles, a gyroidal structure, a swiss-roll structure. Thenanoscale features can be of any shape in any dimension, for example,but not limited to, layers, films, spheres, blocks, pyramids, rings,porous structures, cylinders, linked shapes, shells, freeform shapes,chiral structures, hemispheres, segments or any combination thereof.

The material may include, for example, a graded structure. For example alayered structure in any dimension where some layers within the materialhave lengths, depths, thicknesses, periods or repeating units, thatincrease or decrease from the previous layer. In one embodiment if thelayers are arranged in such a way to produce a graded refractive index,then a customized optical response is produced for a broader range ofwavelengths or angles. The structure may be part of a layered structure,or on a substrate. The substrate may be planar or non-planar orfreeform.

FIG. 2 illustrates an embodiment of 3D array with voids. The materialmay include gaps or voids 220 of any shape. The gaps or voids may bedistributed throughout the material in any dimension and can have sizesranging from 0.01 nm to micron sizes. The gaps or voids may be filledwith a fluid, a liquid gas, monatomic material, organic material,polymer or vacuum. The material may include membranes, free standingstructures or elements, or partially supported structures or features,or supporting structure. The features may be supported by structures orcomponents. The gaps may be periodic or random in distribution. The gasmay include O₂, H2, He, N₂, Ar, CO₂ or other gases including non-inertgases. An example is a 3D periodic array of metallic spheres with airgaps. If the system is under vacuum, then the voids may also includevacuum. FIG. 2 also illustrates a reflectance profile from a materialthat may include voids. As shown in FIG. 2, the reflectance is more than70% at wavelength of approximately 13.5 nm.

The material may further include micro or nano structural features ofthe monatomic material. Some examples of the monatomic material includegraphene, graphite, molybdenum sulphide, and carbon nanotubes. Themonatomic material may serve as an optical element or a heat managementor cooling mechanism element. The monatomic material may be used incombination with other materials e.g. a metal, dielectric,semiconductor. It may form part of a layered structure, periodicstructure, multidimensional or freeform structure, or be on a substrate.

The material may be an organic material or a biomaterial. The materialmay further comprise micro or nano structural features of the organic orbio material. Examples of organic materials or biomaterials, includeDNA, proteins, or other molecular or genomic material which have lowerabsorption in the wavelengths. The organic material or biomaterial mayalso be a sacrificial material, or a soft templating or scaffoldingstructure. The organic or bio material may be encapsulated in othermaterial, which include, but not exclusively, polymers or dielectrics orsemiconductors. The organic or bio material may serve as an opticalelement or a heat management or cooling mechanism element. The organicor bio material may be used in combination with other materials e.g. ametal, dielectric, semiconductor. It may form part of a layeredstructure, periodic structure, multidimensional or freeform structure,or be on a substrate.

The material can also include a polymer. The material may furthercomprise micro or nano structural features of the polymer. The polymermay also be a sacrificial material, or a soft templating or scaffoldingstructure. In some embodiment, the polymer may be removed, leaving gapsor voids in the material. These gaps or voids may form structuralfeatures in the material. In other embodiments, the polymer can remainin the material. The polymer may be photoresist. The polymer may also beirradiated and exposed by a laser or a two or more photon laser process.

The material may include nanoscale features that are made using metals,semiconductors, alloys, dieletrics, compounds, gases, liquids orcombinations of these. These nanoscale structures can be engineered toreduce absorption by the material at one or more band of wavelengths.The metal may include for example gold, silver, platinum, molybdenum,beryllium, ruthenium, rodium, niobium, palladium, copper, lanthanum. Thecombined material may include for example silicon, silicon dioxide,boron carbide, carbon, organic, biomaterial, germanium, polymers ormonatomic materials, liquids or gases or other element, alloy orcompound, or vacuum. In this case, a either material can have a a smallamount of absorption as described by the imaginary part of therefractive index, where one material has more than the other.

The material may have nanosized structures and features which form anarray or are periodic in one, two or three dimensions, for example, butnot limited to, a photonic crystal, plasmonic crystal, metamaterial,chiralic structure or subwavelength structure. Features of the array maybe tuned to optimize the wavelength, spectral bandwidth, photonicbandgap angular acceptance, reflectance including average reflectance(when averaged over the spectral range), transmission, absorption,scattering and electromagnetic enhancement factor, resonance orinteraction modes. The structure may provide a cavity which slows thegroup velocity of light to increase electromagnetic interaction, or forma waveguide or cavity where certain electromagnetic nodes are enhancedand certain nodes are forbidden. In the case of forbidden modes ofpropagation, this may be used to form a selective or omnidirectionalmirror with tunable peak wavelength and spectral bandwidth properties.The cavity can also be used to enhance the conversion of light frominfrared to EUV, as may be needed in a two or more photon process, or alightsource emitting EUV radiation from infrared excitation e.g. aplasma source.

The nanoscale features of the material may, for example, be configuredas a 3D hexagonally packed array. The 3D hexagonally packed array mayinclude a metal. The metal may be, for example, gold, silver, ruthenium,molybdenum, silicon, germanium, or platinum, palladium or other metal.See FIG. 2.

The nanoscale features of the material may, for example, include agyroid structure. The gyroid structure can be a metal, for example,gold, silver, ruthenium, molybdenum, silicon, germanium, or platinum.

The nanoscale features of the material may, for example, be made usinggraphene or molybdenum graphene (Mo-Graphene). The nanoscale featuresmay include a graphene double gyroid structure.

The nanophotonics material may include a periodic one, two orthree-dimensional structure engineered to have a low bulk absorption ofelectromagnetic radiation at selected wavelengths, such as at UV, EUV,or soft X-ray wavelengths.

This disclosure further describes methods, apparatus and techniques usedto fabricate the material. The EUV materials can be fabricated using topdown fabrication procedures, where materials are deposited onto a flatsubstrate via electrodeposition in a controlled vacuum environment. Thedeposited material can have a thickness of approximately 5 nm or lessand a roughness factor less than lambda/20. A low roughness factor maybe preferred due to the Mie scattering from anomalies which reduce theoverall reflectance or transmission of the material. Depositingultraflat materials with sufficiently low roughness can be challenging.When multiple materials or a layered structure is used, each materialand layer can be individually smoothed or polished.

In some embodiments, the EUV material can be fabricated using a bottomup approach. In the bottom up fabrication approach, the bulk materialcan be gradually grown by inserting matter from the bottom end of thestructure, thereby only requiring one surface (the topmost outer layer)for smoothing. The bottom up approach can be used to fabricatelithography based materials for use in the UV, EUV and soft X-ray rangesof wavelengths.

In one embodiment, the material optimized for a particular wavelengthcan be fabricated using a soft templating approach. In the softtemplating approach, certain polymers or sacrificial or temporarymaterials, but not exclusively, may be temporarily used in conjunctionwith electrodeposition and other material deposition techniques. Thesacrificial materials or polymers form a soft template, or scaffoldingstructure, which may later be removed once the actual material is inplace. The sacrificial or temporary material may be removed by chemicaletching or other methods. An example of a sacrificial material may bephotoresist. Another example of a temporary material is a nanosphere.The soft templating approach can be used to fabricate lithography basedmaterials optimized to reduce absorption for one or more of thewavelengths or range of wavelengths in the UV, EUV and the soft X-rayrange. These EUV materials can be further used to manufacture elementsfor lithography systems. FIG. 6 illustrates an embodiment of a methodfor fabrication materials described herein using a polymer based softtemplating approach. The method 500 can include the step of polishing ahost layer. In some embodiments, the method can further include the stepof assembling a polymeric or scaffolding structure. Moreover, the methodcan include growing a main layer over the scaffolding structure. Themethod can also include polishing the surface of the main layer.Furthermore, the method can include the step of removing the polymericor scaffolding structure so that the reflectivity of the material isgreater than 70% at a wavelength between 0.1 nm and 250 nm. In someembodiments, the method can include the step of smoothing one or morelayers through laser irradiation or chemical etching. The polymeric orscaffolding structure can be one or more block co-polymers. In oneembodiment, the method can further include the step of applying acapping or substrate.

The EUV material can also be fabricated using an electroformation orother similar process. In electroformation a material, e.g. a metal, isgrown through another material by chemical, electrical or magneticmeans. This method can be used in the electroformation of the metalmolybdenum and ruthenium, which are not commonly electroformed metals.The electroforming process can be used in the fabrication of lithographybased materials at UV, EUV and soft X-ray range.

The EUV materials can be further fabricated using a self-assembly orother similar process. In self-assembly, certain aspects of thematerial, e.g. nanoscale features are assembled together to form theoverall bulk structure. The assembly formation may either beself-assembly or a directed assembly. In one embodiment, the featuresmay retain a given rigid structure through chemical or electrical ormagnetic means. An example of this is a chemically polarized material.In another embodiment, the substrate of the material may bepre-patterned to ensure a preferential structure or embodiment of thebulk material disposed on top of it. In another embodiment, thesubstrate may be surface treated with an organic or biomaterial orchemically treated to ensure a preferential or selective structure orembodiment of the bulk material disposed on top of it. The self-assemblyapproach can be used to fabricate lithography based materials for use inthe UV, EUV, and soft X-ray ranges of wavelengths.

The material can also be fabricated using a folding process. In thefolding process the material or a subset of the material may be folded,or bent or hinged, to add a higher dimension to the overall materialstructure. For example, but not limited to, a metallo-dielectric 2Darray may be folded to form 3D hierarchical object where the overallbulk material reveals a stacked structure of multiple units of theoriginal material.

The material may also be fabricated using a building block process. Inthe building block process, the material or a subset of the material maybe assembled or stacked to create an overall bulk material structure.For example, but not limited to, a metal semiconductor, 3D array may bestacked in any configuration to form a 3D bulk material object where theoverall bulk material reveals a stacked structure of multiple units ofthe original material.

The material may for example be fabricated by a chemical etchingprocess. Chemical etchants (e.g. acids) may also be used to selectivelyremove material in semiconductors or polymers or metals

In some embodiments, the material may be fabricated using dealloyingprocess. In this method, the material may include a metal. The metal maybe mixed with another auxiliary metal e.g. via a heating/melting processto form an ingot. An acid which may be corrosive can be used to thenselectively remove the auxiliary metal e.g. gold or silver, to leave aporous structure of the original material. The remaining structure mayform a uniform and smooth surface at the atomic level.

The EUV material or any subset or element of the material can be furtherpolished or smoothed using a laser. The laser may have a pulse durationin the femtosecond or picosecond range. The laser may be used prior,during or after the fabrication. The laser may also be used to irradiatethe material post fabrication to efface, remove, clean or dislodge anydefects, anomalies or non uniformities. This includes removal of defectswhich are not directly involved in the fabrication process. For examplein embodiment of the material on a photomask. The photomask while in mayreceive a defect particle from another part of its fabrication process,or a defect particle from a stray ion/element in the lithography orlightsource system. The photomask can subsequently be cleaned by a laserirradiation process.

In some embodiments, a nanoscale structural feature or building block orelement of the material may further be manufactured by laser. The lasermay be used prior during or after the fabrication. The laser approachmay be part of a two or more photon process approach.

The material or any subset or element of the material may further bepolished or smoothed using a chemical etchant with a controlledconcentration. In one embodiment, the material or any subset or elementof the material can be further smoothed using a surfactant, orchemically treated surface, during the formation of the material. Thesurfactant may be removed later. The chemical surfactant approach can beused to fabricate photonic structure formations for use in the UV, EUVand the soft Xray range.

The material or any subset or element of the material, or nanoscalefeature may also be manufactured by a lithography or printing orpatterning process. The lithography or printing process may include forexample, e-beam lithography, nano-imprint lithography, UV, EUV or X-raylithography, 2D or 3D lithography, stereolithography, focused electronor ion beams, scanning tunneling microscopy, scanning probe lithography,atomic force microscopy, sol-gel nanofabrication, two or more photonlithography, dip pen lithography, near field lithography, laser assistedimprinting, temperature based patterning, laser based patterning. Inaddition, an etching or deposition or temperature process may be used incombination with the lithography or printing process. The lithography orprinting approach can be used to fabricate lithography based materialsat UV, EUV and soft X-ray range and used in lithography devices, systemsor apparatus.

In another aspect, the disclosure relates to a method of making amaterial including nanoscale features for use at a selectedelectromagnetic wavelength range. The material may be a material asdescribed herein for elements or devices used for lithography or otheroptical applications. The material can also be fabricated using a blockcopolymer scaffold process. The method may include, for example,fabricating a block copolymer structure having at least a first blockand a second block. The method may further include removing the firstblock, and replacing at least a portion of a volume of the structureoccupied by the first block with a metal or semiconductor or polymer,dielectric or monatomic material. The block co-polymer approach can beused to fabricate lithography based materials for use in the UV, EUV,and soft X-ray ranges of wavelengths.

The first block may be, for example, a selectively degradable block. Themethod may further include removing the second block and/or removing anyadditional blocks, in whole or in part. The second block and/or anyadditional blocks may be removed using a process such as plasma etching

Replacement of at least a portion of the volume may include, forexample, electrochemically depositing the metal or semiconductor.Replacement of at least a portion of the volume may includeelectrodeposition or electroformation of the metal or semiconductor.

In another embodiment, the material can be fabricated using a swiss rollor a laminate process. In the swiss roll process, the material or asubset of the material may be rolled from one end to add a higherdimension to the overall material structure, and a cross section of theoverall material appears as multiple formations of the material. Forexample, but not limited to, a metallo-dielectric 2D array may be rolledfrom one end to form a 3D cylindrical object where the cross-section ofthe cylindrical object, perpendicular to the axis, can reveal a stackedstructure of multiple units of the original material.

In another aspect, the disclosure relates to an element of a system orsubsystem. The element may include a material having nanoscale featuresdesigned to be at least partially reflective or transmissive toelectromagnetic radiation, or electromagnetic interaction enhancement,in a selected electromagnetic wavelength range. The material may be amaterial such as described previously or subsequently herein. Thematerial may be disposed on an element, or embedded within the element,or embedded within a radiation emitting system or element within aradiation emitting system, or radiation monitoring device at theselected wavelength range.

In one embodiment, the system or subsystem is a lithography system. Theelements may be one of the components of the lithography system. Forexample, elements can include,but not limited to, a photomask, adetector, a wavelength monitor, bandwidth or power monitor, sensors,photoresist, a substrate, a cooling mechanism, a heat managementmechanism, light source, lamp, laser, optical element, mask aligner,integrator, structural component, electrical device, optical device orany other component contained within the system. The system or subsystemmay also include a semiconductor manufacturing device or apparatus. FIG.3 illustrates an element 300 (photomask, in this example) that caninclude a material 316. The mask 300 can receive radiation 320 of aselected wavelength. In one embodiment, the material 316 can be a 3-Darray as described with respect to FIG. 2. In other embodiments, thematerial 316 can be any of the materials described herein that canincrease reflectance of the element 300. In some embodiments, thereflectivity of the element 300 can be increased to more than 70% for aselected wavelength. The wavelength can be between 0.1 nm and 250 nm.The material 316 can be integrated in the mask 300 as illustrated inFIG. 3. In one embodiment, the material is sandwiched between the topand bottom layers of the mask 300. Other methods of affixing thematerial 316 can also be used.

It should be noted that in addition to lithography systems, thematerials described above can also be used in a biotech system, a 2D or3D printing or patterning system, or a material processing system. Thesesystems can also include elements that can use EUV materials to improveperformance. Elements can include, for example, a photomask, a detector,a wavelength monitor, bandwidth or power monitor, sensors, photoresist,a substrate, a cooling mechanism, a heat management mechanism, lightsource, lamp, laser, optical element, mask aligner, integrator,structural component or any other element or component contained withinthe system. In some embodiments, the EUV materials can be used in aprojection lens system. For example, in this system, instrumentation mayinclude multiple optical elements at the selected wavelength range e.g.a telescope or a satellite.

Another example of a system where EUV materials can be used is a systemthat involves detection at the selected electromagnetic wavelengthrange, for example, X-ray detection,imaging and scanning systems,radiation from nucleic particles, and accelerator systems, biotechnologysystems. EUV materials can also be used in scanning and imaging systems.EUV materials can also be used in systems that require reducedabsorption in one or more ranges of operating wavelengths.

In one embodiment, the element is an optical element. The opticalelement may include an optical substrate, mirror, lens, surface, window,facet, filter, covering element, capping layer, barrier layer, thinfilm, coating, internal surface area, collector, droplet generator,interdispersed material, panel, waveguide, cavity, fiber, structuralcomponent, reflective element, transmissive element, a detector, awavelength monitor, bandwidth or power monitor, sensors, electricaldevice or optical device, or any other optical elements that may be usedin systems described above. The optical substrate can be fused silica,or calcium fluoride, or magnesium fluoride. The optical element may alsobe neither transmissive nor reflective, but serve to increase theelectromagnetic interaction with a certain region. For example it mayenhance certain electromagnetic mode so radiation, form a cavity, orincrease internal surface area available for interaction. FIG. 5illustrates an embodiment of an optical element 500 where a material 510is disposed on top of the surface 520 of the optical element 500. Thematerials can be affixed with the optical element 500 using othermethods not shown here. The optical element 500 can receive radiation530 of a selected wavelength. In one embodiment, the material 510 can bea 3-D array as described with respect to FIG. 2. In other embodiments,the material 510 can be any of the materials described herein that canincrease reflectance of the optical element 500. In some embodiments,the reflectivity of the optical element 500 can be increased to morethan 70% for a selected wavelength. The wavelength can be between 0.1 nmand 250 nm. The optical element can be used with any of the systemsdescribed herein.

FIG. 4 illustrates an embodiment of a material-photoresist composite400. The material 410 can be embedded or interdispersed in a hostmaterial, e.g. photoresist 420. The material can improve the performanceof the host material 420. In the case of photoresist, the increase inelectromagnetic interaction i.e. scattering and absorption with thepolymer or organic material can increase the sensitivity of thephotoresist.

In another aspect, the disclosure relates to a reflective element. Thereflective element may include a material having nanoscale featuresconfigured to be at least partially reflective to electromagneticradiation in a selected electromagnetic wavelength range. The materialmay be a material such as described previously or subsequently herein.

The reflective element may be, for example, an optic or a component ofan optic. The optic may be, for example, a mirror, lens, optical window,filter or coating, thin film, membrane or substrate or other opticalelement. Alternately, the reflective element may be a component of amask or a coating or layer of material of the mask. The mask may be aphotolithography mask. Alternately, the reflective element may be aphotoresist or an element of a photoresist. The photoresist may be aphotolithography photoresist. The reflective element may be, forexample, a component or element of a lithography device or system, suchas an EUVL system, or a soft X-ray system.

The reflective element may be, for example, a coating or layer ofmaterial disposed on or in an optic, photoresist, mask, or othercomponent or device. The optic may be a fused silica or calcium fluorideoptic.

The reflective element may be, for example, configured as a component ofa photolithography device. The reflective element may be configured as acomponent of an electromagnetic radiation source device. The reflectiveelement may be configured as a component of a semiconductormanufacturing device or other device using UV, EUV, or soft X-rayelectromagnetic radiation. The reflective element may be a component ofa UV, EUV, or X-ray lightsource.

The reflective element may include a material having nanoscale featuresconfigured to be partially reflective in the selected electromagneticwavelength range. Alternately, or in addition, the reflective elementmay include material having nanoscale features configured to besubstantially fully reflective in the selected electromagneticwavelength range. In some embodiments, the reflective element mayinclude material having structural features configured to have areflectivity of greater than or equal to 70%.

The reflective element may include a material having nanoscale featuresconfigured to be reflective in the selected electromagnetic wavelengthrange where the material can be consistently fabricated to have areflectivity greater than or equal to 70%.

The reflective element may include a material having nanoscale featuresconfigured to increase spectral bandwidth in the electromagneticwavelength range. An example of this would be a graded structure.

The reflective element may include a material having nanoscale featuresconfigured to increase angular acceptance in the electromagneticwavelength range. An example of this would be a 2D or 3D symmetricstructure.

The reflective element may include a material having nanoscale featuresconfigured to increase average reflectance (integrated or averaged overthe spectral range) in the electromagnetic wavelength range.

In another aspect, the disclosure relates to a transmissive/transparentelement. The transparent element may include a material having nanoscalefeatures configured to be at least partially transmissive (greater thanor equal to 4%) to electromagnetic radiation in a selectedelectromagnetic wavelength range. The material may be a material such asdescribed previously or subsequently herein. The transparent element maybe, for example, a component or element of a lithography device orsystem, such as an EUVL system, or a soft X-ray system or abiotechnology or material processing system.

The transparent element may be, for example, an optic or a component ofan optic. The optic may be, for example, a mirror, lens, optical window,or other optical element. Alternately, the transparent element may be acomponent of a mask or a coating or layer of material of the mask. Themask may be a photolithography mask. Alternately, the transparentelement may be a photoresist or an element of a photoresist. Thephotoresist may be a photolithography photoresist.

The transparent element may be, for example, a coating or layer ofmaterial disposed on or in an optic, photoresist, mask, or othercomponent or device. The optic may be a fused silica or calcium fluorideoptic.

The transparent element may be a component of a photolithography device.In some embodiments, the transparent element can be a component of anelectromagnetic radiation source device. The transparent element mayalso be configured as a component of a semiconductor manufacturingdevice or other device using UV, EUV, or soft Xray electromagneticradiation. The transparent element may be a component of a UV, EUV, orX-ray light source. The transparent element may be a component of anoptical window or a coating or layer of material disposed on or in theoptical window.

In another aspect, the disclosure relates to means for fabricating andusing the above-described nanophotonics materials and related methods,in whole or in part.

In another aspect, the disclosure relates to methods of using suchnanophotonics materials in systems such as extreme ultravioletlithography (EUVL) or soft Xray lithography systems or other systems.

In another aspect, the disclosure relates to components, devices, andsystems including the above-described nanophotonics materials, in wholeor in part.

Various additional aspects, features, and functionality are furtherdescribed below in conjunction with the appended Drawings.

The exemplary embodiments described herein are provided for the purposeof illustrating examples of various aspects, details, and functions ofapparatus, methods, and systems for inspecting the interior if pipes,conduits, and other voids; however, the described embodiments are notintended to be in any way limiting. It will be apparent to one ofordinary skill in the art that various aspects may be implemented inother embodiments within the spirit and scope of the present disclosure.

It is noted that as used herein, the term, “exemplary” means “serving asan example, instance, or illustration.” Any aspect, detail, function,implementation, and/or embodiment described herein as “exemplary” is notnecessarily to be construed as preferred or advantageous over otheraspects and/or embodiments.

Extreme Ultraviolet Lithography is a significant departure from otherultraviolet (UV) lithography, such as the deep ultraviolet lithographytechnology in general use today. EUV radiation is highly absorbed by allmaterials, and therefore EUV lithography typically takes place in avacuum. Optical elements in such systems should be configured tominimize absorption of EUV radiation, however, this is difficult toimplement. For example, components such as mirrors will typically absorbaround 35-40% of the incident light.

Typical pre-production EUVL systems built to date contain at least twocondenser multilayer mirrors, six projection multilayer mirrors, and amultilayer object (mask). Since the optics already absorbs approximately96% of the available EUV light, an appropriate EUV lightsource will needto be sufficiently bright to overcome this loss of radiation. EUV sourcedevelopment has focused on plasmas generated by laser or dischargepulses. The mirror responsible for collecting the light is directlyexposed to the plasma and is therefore vulnerable to thermal damage anddamage from the high-energy ions and other debris. This damageassociated with the high-energy process of generating EUV radiation haslimited implementation of EUV light sources for lithography.

Consequently, existing EUV Lithography scanner units have poorefficiency because of these absorption properties of EUV lithographydevices using traditional materials for elements such as optics,mirrors, optical windows, masks, photoresists, and other elements orcomponents.

While one-dimensional structures may present some potential advantages,they also include limitations. For example, initial simulation analysisof a molybdenum/silicon multilayer stack configuration indicates thatthe maximum reflectivity obtainable from a one dimensionalmolybdenum/silicon multilayer stack at 90 nanometers with 50 layers ofperiodicity is a theoretical maximum of 70.6% at zero degrees incidentangle, as shown in FIG. 1. In practice the reflectivity is lower due todefects in fabrication process and Mie Scattering.

Accordingly, in some embodiments, an EUV reflective element (andassociated devices) having a two or three dimensional nanoscalestructure, for operating in wavelength ranges of approximately 13.5 nmand having a reflectivity of approximately 80 percent or higher, may befabricated and used in applications such as EUVL, using techniques suchas those described here. In addition, materials with similarlytransmissive properties (e.g., EUV transparent materials and associatecomponents and devices) may be similarly fabricated using techniquessuch as those described herein.

In another aspect, nanostructured (nanophotonics) two or threedimensional materials such as those described herein or similar orequivalent materials may be used in components & devices such as, forexample, lasers and laser systems, light sources, scanners, masks, andresist materials, or other devices or systems for use in manufacturingsemiconductors or other devices.

Other applications may include plasma sources or synchrotron radiationsources or other electromagnetic radiation sources. Still otherapplications may include excimer or other lasers, such as industriallasers, as well as X-ray electromagnetic radiation devices or otherdevices for generating or using electromagnetic radiation in wavelengthranges such as infrared, visual, UV, EUV, or Xray wavelengths.Components and devices using nanophotonic materials may also be used inother applications such as biomedical devices or other devices orsystems.

In some embodiments, a three dimensional graphene photonic crystal maybe used as a nanophotonics material for devices and systems operating atUV, EUV and Xray wavelengths. Graphene is a recently developed materialthat has high thermal conductivity and can be configured to betransparent or, through use of stacking, layering or other compositeconfigurations, made reflective or absorptive. Similarly, in someembodiments, carbon nanotubes, which have similar properties tographene, may be used to make transparent or reflective nanophotonicsmaterials. For example, graphene or carbon nanotube materials may beused in lithography devices as, for example, a coating or layeredmaterial. High thermal conductivity of these materials makes themadvantageous for applications where transparency or reflectivity arerequired (e.g., at UV, EUV, and/or soft Xray wavelengths) along with aneed for high conduction generated heat (e.g., high thermal dissipationin devices such as light scanning tools, machines for wafer patterning,two-photon devices, or other devices or systems where UV, EUV, and/orXray radiation is used, such as to pattern a photoresist.

In another embodiment, a nanostructured material may be fabricated in adouble gyroid structure. The double gyroid structure may comprise, forexample, Gold (Au) and/or Molybdenum (Mo). The double gyroid structuremay be fabricated using a block copolymer technique, such as describedpreviously herein. Such a material may have a low metallic density withambient air in the interstices. For example, the metallic density may beless than corresponding bulk material by, for example, a factor of 10 orgreater.

Other embodiments and modifications of this disclosure may occur readilyto those of ordinary skill in the art in view of these teachings.Therefore, the protection afforded this disclosure is to be limited onlyby the following claims, which include all such embodiments andmodifications when viewed in conjunction with the above specificationand accompanying drawing.

It is understood that the specific order or hierarchy of steps or stagesin the processes and methods disclosed herein are examples of exemplaryapproaches. Based upon design preferences, it is understood that thespecific order or hierarchy of steps in the processes may be rearrangedwhile remaining within the scope of the present disclosure unless notedotherwise.

The previous description of the disclosed embodiments is provided toenable any person skilled in the art to make or use the presentdisclosure. Various modifications to these embodiments will be readilyapparent to those skilled in the art, and the generic principles definedherein may be applied to other embodiments without departing from thespirit or scope of the disclosure. Thus, the present disclosure is notintended to be limited to the embodiments shown herein but is to beaccorded the widest scope consistent with the principles and novelfeatures disclosed herein.

The disclosure is not intended to be limited to the aspects shownherein, but is to be accorded the full scope consistent with thespecification and drawings, wherein reference to an element in thesingular is not intended to mean “one and only one” unless specificallyso stated, but rather “one or more.” Unless specifically statedotherwise, the term “some” refers to one or more. A phrase referring to“at least one of” a list of items refers to any combination of thoseitems, including single members. As an example, “at least one of: a, b,or c” is intended to cover: a; b; c; a and b; a and c; b and c; and a, band c.

The previous description of the disclosed aspects is provided to enableany person skilled in the art to make or use the present disclosure.Various modifications to these aspects will be readily apparent to thoseskilled in the art, and the generic principles defined herein may beapplied to other aspects without departing from the spirit or scope ofthe disclosure. Thus, the disclosure is not intended to be limited tothe aspects shown herein but is to be accorded the widest scopeconsistent with the principles and novel features disclosed herein.

Conditional language used herein, such as, among others, “can,” “might,”“may,” “e.g.,” and the like, unless specifically stated otherwise, orotherwise understood within the context as used, is generally intendedto convey that certain embodiments include, while other embodiments donot include, certain features, elements and/or states. Thus, suchconditional language is not generally intended to imply that features,elements and/or states are in any way required for one or moreembodiments or that one or more embodiments necessarily include logicfor deciding, with or without author input or prompting, whether thesefeatures, elements and/or states are included or are to be performed inany particular embodiment. The terms “comprising,” “including,”“having,” and the like are synonymous and are used inclusively, in anopen-ended fashion, and do not exclude additional elements, features,acts, operations, and so forth. Also, the term “or” is used in itsinclusive sense (and not in its exclusive sense) so that when used, forexample, to connect a list of elements, the term “or” means one, some,or all of the elements in the list. In addition, the articles “a” and“an” are to be construed to mean “one or more” or “at least one” unlessspecified otherwise.

Conjunctive language such as the phrase “at least one of X, Y and Z,”unless specifically stated otherwise, is otherwise understood with thecontext as used in general to convey that an item, term, etc. may beeither X, Y or Z. Thus, such conjunctive language is not generallyintended to imply that certain embodiments require at least one of X, atleast one of Y and at least one of Z to each be present.

While the above detailed description has shown, described, and pointedout novel features as applied to various embodiments, it will beunderstood that various omissions, substitutions, and changes in theform and details of the devices or algorithms illustrated can be madewithout departing from the spirit of the disclosure. Thus, nothing inthe foregoing description is intended to imply that any particularfeature, characteristic, step, module, or block is necessary orindispensable. As will be recognized, the processes described herein canbe embodied within a form that does not provide all of the features andbenefits set forth herein, as some features can be used or practicedseparately from others. The scope of protection is defined by theappended claims rather than by the foregoing description.

What is claimed is:
 1. An element configured to be used in a lightexposure system, wherein the system or subsystem comprises a lightsource configured to transmit light having a wavelength, the elementcomprising: a material having plurality of structural features, saidplurality of structural features having a first size of between 250 nmand 0.01 nm; wherein the plurality of structural features are configuredto improve the reflectivity of the element to greater than 70% for awavelength between 0.1 nm and 250 nm.
 2. An element configured to beused in a light exposure system, wherein the system or subsystemcomprises a light source configured to transmit light having awavelength, the element comprising: a material having plurality ofstructural features, said plurality of structural features having afirst size of between 250 nm and 0.01 nm; wherein the plurality ofstructural features are configured to improve the transmission of theelement to greater than 4% for a wavelength between 0.1 nm and 250 nm.3. An element configured to be used in a light exposure system, whereinthe system or subsystem comprises a light source configured to transmitlight having a wavelength, the element comprising: a material havingplurality of structural features, said plurality of structural featureshaving a first size of between 250 nm and 0.01 nm; wherein the pluralityof structural features are configured to control the electromagneticradiation absorption for a wavelength between 0.1 nm and 250 nm.
 4. Thelight exposure system according to claims 1, 2 or 3 where the systemincludes a photolithography tool, biotechnology system, scanning orimaging system, astronomical system, material processing system or aprinting system.
 5. The element according to claims 1, wherein theplurality of structural features having a first size, said first sizesubstantially correlating with the wavelength.
 6. The element accordingto claims 1, 2 or 3, wherein the plurality of structural features areone, two, or three dimensional.
 7. The element according to claims 1,wherein the plurality of structural features have a periodicity in thematerial, said periodicity may be in one, two, or three dimensions. 8.The element according to claims 1, 2 or 3, wherein the plurality ofstructural features are arranged in one of the following: semi-periodic,aperiodic, quasi-periodic, graded, partially graded, symmetric, fractal,gyroid, swiss roll, non-planar, segments, repeated unit, forming apattern, or randomly or semi random order in the material.
 9. Theelement according to claims 1, 2 or 3, wherein the material or theplurality of structural features comprises one or more of the following:metal, dielectric, gas, liquid, compound, semiconductor, polymer,organic material, biological material, monatomic material, air, Carbon,Molybedenum, Beryllium, Lanthanam, Boron Carbide, Silicon, SiO2, TiO2,Ruthenium, Niobium, Rodium, Gold, Silver, Copper, Platinum, Palladium,Germanium, DNA, proteins, graphene, graphite, carbon nanotubes, MoS, O2,N2, He, H2, Ar, CO2.
 10. The element according to claims 1, wherein theelement comprises a substrate, mirror, lens, surface, window, facet,filter, covering element, capping layer, protective layer, barrierlayer, thin film, coating, internal surface area, collector, dropletgenerator, interdispersed material, panel, waveguide, cavity, fiber,structural component, reflective element, transmissive element, adetector, a wavelength monitor, bandwidth or power monitor, sensors, aphotomask, photoresist, a cooling mechanism, a heat managementmechanism, light source, lamp, laser, optical element, mask aligner,integrator, structural component, optical device, or an electricaldevice.
 11. The element according to claim 1, wherein the plurality ofstructural features have shapes or dimensions containing layers, films,spheres, blocks, pyramids, rings, porous structures, cylinders, linkedshapes, shells, freeform shapes, chiral structures, hemispheres orsegments.
 12. The element according to claim 1, wherein the material orstructural features are cleaned or post processed or smoothed by one ofthe following methods of processing: chemical etching, laser radiationor heating.
 13. The element according to claim 1, wherein the materialor subset of the material or aspect of the material is fabricated by oneof the following methods of processing: self-assembly, directedassembly, soft templating, electroforming, electroplating, sacrificialor scaffolding materials, block co-polymers, bottom-up techniques, EUVor XUV lithography, focused electron or ion beams, nanoimprinting,atomic force or scanning probe microscopy, two or more photonlithography, laser irradiation, dealloying, chemical etching, chemicalsurfactants, surface treatments.